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90V|400mA|2W
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MOSFET 4N-CH 90V 0.4A 14DIP
Specifications
- Brand
- Vishay Siliconix
- Package
- -
- Packaging
- —
- Weight
- —
Total Inventory
438pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how VQ1006P from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Siliconix | |
| Series | - | |
| FET Type | 4 N-Channel | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 90V | |
| Current - Continuous Drain (Id) @ 25°C | 400mA | |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V | |
| Power - Max | 2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | - | |
| Supplier Device Package | 14-DIP |
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DUAL 8 MHZ OP E TEMP
GIC 2.5 HDR ASSY TIN VERSION 3P
Datasheet & Documents
vq1006p-e3.pdf
PDF Document · 5 pages
