Heisener Electronics
BOM

VP2206N2

60V|750mA (Tj)|360mW (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 60V 750MA 3TO-39

Specifications

Brand
Microchip Technology
Package
TO-39
Packaging
—
Weight
—

Total Inventory

675pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how VP2206N2 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrochip Technology
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C750mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 25V
FET Feature-
Power Dissipation (Max)360mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-39
Package / CaseTO-205AD, TO-39-3 Metal Can

Recommended Products

CW02B30R00JS70

CW02B30R00JS70

RES 30 OHM 3.75W 5% AXIAL

CMF55191K00BERE70

CMF55191K00BERE70

RES 191K OHM 1/2W 0.1% AXIAL

D55342E07B33B6RWS

D55342E07B33B6RWS

RES SMD 33.6K OHM 0.1% 1/4W 1206

RN73H1ETTP4752D25

RN73H1ETTP4752D25

RES THIN FILM SMD

AF122-FR-07215KL

AF122-FR-07215KL

RES ARRAY 2 RES 215K OHM 0404

SIT9005AIF2G-33DP

SIT9005AIF2G-33DP

MEMS OSC PRG SSXO LVCMOS DS 3.3V

SIT9005AIB1H-18DB

SIT9005AIB1H-18DB

MEMS OSC PRG SSXO LVCMOS CS 1.8V

VI-B3Z-CU-F4

VI-B3Z-CU-F4

DC DC CONVERTER 2V 80W

PBC33DFDN

PBC33DFDN

CONN HEADER .100 DUAL STR 66POS

MPQ20073DH-AEC1-LF-P

MPQ20073DH-AEC1-LF-P

AUTOMOTIVE GRADE, 2A, 1.3V-6.0V