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100V|2A (Ta), 1A (Ta)|2W (Ta)
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MOSFET N/P-CH 100V 2A HUML2020L8
Specifications
- Brand
- Rohm Semiconductor
- Package
- 6-PowerUDFN
- Packaging
- —
- Weight
- —
Total Inventory
9,870pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how UT6ME5TCR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | MOSFET (Metal Oxide) | |
| FET Feature | - | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta), 1A (Ta) | |
| Rds On (Max) @ Id, Vgs | 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 10V, 6.7nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 50V | |
| Power - Max | 2W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-PowerUDFN | |
| Supplier Device Package | HUML2020L8 |
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