Heisener Electronics
BOM

USB10H_1

20V|1.9A|700mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2P-CH 20V 1.9A SSOT6

Specifications

Brand
ON Semiconductor
Package
SOT-23-6 Thin, TSOT-23-6
Packaging
—
Weight
—

Total Inventory

153pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how USB10H_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.9A
Rds On (Max) @ Id, Vgs170mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds441pF @ 10V
Power - Max700mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6

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Datasheet & Documents

usb10h.pdf

PDF Document · 5 pages

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Datasheet Preview

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