Heisener Electronics
BOM

US6M11TR

20V, 12V|1.5A, 1.3A|1W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N/P-CH 20V/12V TUMT6

Specifications

Brand
Rohm Semiconductor
Package
6-SMD, Flat Leads
Packaging
—
Weight
—

Total Inventory

470pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how US6M11TR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V, 12V
Current - Continuous Drain (Id) @ 25°C1.5A, 1.3A
Rds On (Max) @ Id, Vgs180mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds110pF @ 10V
Power - Max1W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-SMD, Flat Leads
Supplier Device PackageTUMT6

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Datasheet & Documents

us6m11tr.pdf

PDF Document · 8 pages

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Datasheet Preview

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