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12V|1.3A|320mW
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MOSFET 2P-CH 12V 1.3A TUMT6
Specifications
- Brand
- Rohm Semiconductor
- Package
- 6-SMD, Flat Leads
- Packaging
- —
- Weight
- —
Total Inventory
458pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how US6J11TR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | 2 P-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 12V | |
| Current - Continuous Drain (Id) @ 25°C | 1.3A | |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 1.3A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 6V | |
| Power - Max | 320mW | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-SMD, Flat Leads | |
| Supplier Device Package | TUMT6 |
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