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UMH1NTN

50V|100mA|150mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS 2NPN PREBIAS 0.15W UMT6

Specifications

Brand
Rohm Semiconductor
Package
6-TSSOP, SC-88, SOT-363
Packaging
—
Weight
—

Total Inventory

399pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how UMH1NTN from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUMT6

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Datasheet & Documents

umh1ntn.pdf

PDF Document · 10 pages

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