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4800V|10.2A
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DIODE GEN PURP 4.8KV 10.2A UGE
Specifications
- Brand
- IXYS
- Package
- UGE
- Packaging
- —
- Weight
- —
Total Inventory
184pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how UGE0221AY4 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 4800V | |
| Current - Average Rectified (Io) | 10.2A | |
| Voltage - Forward (Vf) (Max) @ If | 4.8V @ 30A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 2mA @ 4800V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Chassis Mount | |
| Package / Case | UGE | |
| Supplier Device Package | UGE | |
| Operating Temperature - Junction | - |
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INTEGRATED CIRCUIT
PRESSURE TRANSDUCER
Datasheet & Documents
uge0221ay4.pdf
PDF Document · 2 pages
