Heisener Electronics
BOM

TSM650P03CX

30 V|4.1A (Tc)|1.56W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

-30V, -4.1A, SINGLE P-CHANNEL PO

Specifications

Brand
Taiwan Semiconductor Corporation
Package
SOT-23
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TSM650P03CX from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs65mOhm @ 4A, 10V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds810 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.56W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

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