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20V|4.1A (Tc)|1.56W (Tc)
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MOSFET P-CHANNEL 20V 4.1A SOT23
Specifications
- Brand
- Taiwan Semiconductor Corporation
- Package
- SOT-23
- Packaging
- —
- Weight
- —
Total Inventory
19,196pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TSM650P02CX-RFG_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
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Technical Specifications
| Manufacturer | Taiwan Semiconductor Corporation | |
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3A, 4.5V | |
| Vgs(th) (Max) @ Id | 800mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 4.5V | |
| Vgs (Max) | ±10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 515pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.56W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23 | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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