Heisener Electronics
BOM

TSM60NB600CH

600 V|7A (Tc)|63W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

600V, 7A, SINGLE N-CHANNEL POWER

Specifications

Brand
Taiwan Semiconductor Corporation
Package
TO-251 (IPAK)
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TSM60NB600CH from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds516 pF @ 100 V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251 (IPAK)
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA

Recommended Products

Y162522R1000C9W_1

Y162522R1000C9W_1

RES SMD 22.1 OHM 0.25% 0.3W 1206

RNCF1206DTC6K80

RNCF1206DTC6K80

RES 6.8K OHM 0.5% 1/3W 1206

CS33B4000

CS33B4000

FERRITE 140OHM HINGED 49.80MM

6A60G-A0G_1

6A60G-A0G_1

DIODE GEN PURP 600V 6A R-6

UPG66-25675-35

UPG66-25675-35

CIRCUIT BREAKER MAG-HYDR LEVER

LELBXK1-35186-100-V

LELBXK1-35186-100-V

CIR BRKR MAG-HYDR ROCKER

54242-407101650LF

54242-407101650LF

CONN STACKER 10POS 0.100" SMD

GSC10DTEH

GSC10DTEH

CONN EDGE DUAL FMALE 20POS 0.100

HM2P09PDE120N9LF

HM2P09PDE120N9LF

CONN HEADER 55POS TYPE C VERT

UG3KB80G

UG3KB80G

BRIDGE RECT 1PHASE 800V 3A D3K