Heisener Electronics
BOM

TSM60NB1R4CP-ROG_1

600V|3A (Tc)|28.4W (Tc)
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MOSFET N-CHANNEL 600V 3A TO252

Specifications

Brand
Taiwan Semiconductor Corporation
Package
TO-252, (D-Pak)
Packaging
—
Weight
—

Total Inventory

317pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TSM60NB1R4CP-ROG_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds257.3pF @ 100V
FET Feature-
Power Dissipation (Max)28.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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