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600V|3.3A (Tc)|38W (Tc)
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MOSFET N-CH 600V 3.3A TO252
Specifications
- Brand
- Taiwan Semiconductor Corporation
- Package
- TO-252, (D-Pak)
- Packaging
- —
- Weight
- —
Total Inventory
203pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TSM60N1R4CP-ROG_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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- Dedicated application engineering support
Technical Specifications
| Manufacturer | Taiwan Semiconductor Corporation | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 370pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 38W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252, (D-Pak) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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