Heisener Electronics
BOM

TSM250N02DCQ

20V|5.8A (Tc)|620mW (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 20V 5.8A 6TDFN

Specifications

Brand
Taiwan Semiconductor Corporation
Package
6-VDFN Exposed Pad
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TSM250N02DCQ from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeMOSFET (Metal Oxide)
FET Feature-
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5.8A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id0.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds775pF @ 10V
Power - Max620mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-VDFN Exposed Pad
Supplier Device Package6-TDFN (2x2)

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