TSM2309CX-RFG

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Discover how TSM2309CX-RFG from TSC America Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Manufacturer	TSC America Inc.
Series	-
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	190 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 30V
FET Feature	-
Power Dissipation (Max)	1.56W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

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