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30V|25A (Tc)|21W (Tc)
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MOSFET N-CH 30V 25A 8PDFN
Specifications
- Brand
- Taiwan Semiconductor Corporation
- Package
- 8-PDFN (3x3)
- Packaging
- —
- Weight
- —
Total Inventory
214pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TSM180N03PQ33-RGG_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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Technical Specifications
| Manufacturer | Taiwan Semiconductor Corporation | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 12A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 4.5V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 21W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-PDFN (3x3) | |
| Package / Case | 8-PowerWDFN |
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