Heisener Electronics
BOM

TSM160N10LCR

100 V|8A (Ta), 46A (Tc)|2.6W (Ta), 83W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

100V, 46A, SINGLE N-CHANNEL POWE

Specifications

Brand
Taiwan Semiconductor Corporation
Package
8-PDFN (5x6)
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TSM160N10LCR from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C8A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4431 pF @ 50 V
FET Feature-
Power Dissipation (Max)2.6W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (5x6)
Package / Case8-PowerTDFN

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