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TSM13ND50CI

500V|13A (Tc)|57W (Tc)
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500V 13A SINGLE N-CHANNEL POWER

Specifications

Brand
Taiwan Semiconductor Corporation
Package
ITO-220
Packaging
—
Weight
—

Total Inventory

5,307pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TSM13ND50CI from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs480mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1877pF @ 50V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220
Package / CaseTO-220-3 Full Pack, Isolated Tab

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