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60V|260A (Tc)|960mW (Ta), 170W (Tc)
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X35 PB-F POWER MOSFET TRANSISTOR
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- 8-DSOP Advance
- Packaging
- —
- Weight
- —
Total Inventory
7,099pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TPW1R306PL-L1Q from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSIX-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 260A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 1.29mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 8100pF @ 30V | |
| FET Feature | - | |
| Power Dissipation (Max) | 960mW (Ta), 170W (Tc) | |
| Operating Temperature | 175°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-DSOP Advance | |
| Package / Case | 8-PowerVDFN |
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