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TPS1100D

15V|1.6A (Ta)|791mW (Ta)
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MOSFET P-CH 15V 1.6A 8-SOIC

Specifications

Brand
Texas Instruments
Package
8-SOIC
Packaging
—
Weight
—

Total Inventory

750pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TPS1100D from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

Manufacturer-
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)15V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 10V
Rds On (Max) @ Id, Vgs180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.45nC @ 10V
Vgs (Max)+2V, -15V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)791mW (Ta)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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