Contact
Send MessageTPN22006NH-LQ
60V|9A (Ta)|700mW (Ta), 18W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N CH 60V 9A 8-TSON
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- 8-TSON Advance (3.3x3.3)
- Packaging
- —
- Weight
- —
Total Inventory
130pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TPN22006NH-LQ from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSVIII-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 30V | |
| FET Feature | - | |
| Power Dissipation (Max) | 700mW (Ta), 18W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) | |
| Package / Case | 8-PowerVDFN |
Recommended Products
RES MF 1/2W 1% AXIAL
SENSOR PHOTO 940NM SIDE VIEW SMD
SENSOR DIGITAL 0C-85C 8VSSOP
DC DC CONVERTER 2V 30W
DC DC CONVERTER 2V 100W
BRIDGE RECT 1P 100V 1.5A 4DIP
DIODE GEN PURP 1KV 1A DO-41
TVS DIODE 6.5V 11.2V DO214AB
CONN PLUG 9POS RT ANG W/SKTS
IC FPGA 552 I/O 1152FBGA
