Contact
Send MessageTPN2010FNH-L1Q
250V|5.6A (Ta)|700mW (Ta), 39W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 250V 5.6A 8TSON
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- 8-TSON Advance (3.3x3.3)
- Packaging
- —
- Weight
- —
Total Inventory
158pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TPN2010FNH-L1Q from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSVIII-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 250V | |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 198mOhm @ 2.8A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 200µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 700mW (Ta), 39W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) | |
| Package / Case | 8-PowerVDFN |
Recommended Products
RES 20 OHM 7W 1% WW AXIAL
RES 18K OHM 0.1% 0.3W RADIAL
MEMS OSC XO 25.0000MHZ CMOS SMD
CAP CER 0.039UF 16V C0G/NP0 1210
IC CLOCK GENERATOR PLL
IC FF D-TYPE DUAL 1BIT 14DHVQFN
BRIDGE RECT 1PHASE 400V 1A ABS
TVS DIODE 6VWM SMD
.025" BOARD SPACERS
CONN RCPT 21POS JAM NUT W/PINS
