Heisener Electronics
BOM

TPAR3G

400 V|3A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

120NS, 3A, 400V, FAST RECOVERY R

Specifications

Brand
Taiwan Semiconductor Corporation
Package
TO-277, 3-PowerDFN
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TPAR3G from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeAvalanche
Voltage - DC Reverse (Vr) (Max)400 V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.55 V @ 3 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)120 ns
Current - Reverse Leakage @ Vr10 µA @ 400 V
Capacitance @ Vr, F58pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-277, 3-PowerDFN
Supplier Device PackageTO-277A (SMPC)
Operating Temperature - Junction-55°C ~ 175°C

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