Heisener Electronics
BOM

TP2435N8-G

350V|231mA (Tj)|1.6W (Ta)
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MOSFET P-CH 350V 0.231A SOT89-3

Specifications

Brand
Microchip Technology
Package
TO-243AA (SOT-89)
Packaging
—
Weight
—

Total Inventory

182pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TP2435N8-G from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)350V
Current - Continuous Drain (Id) @ 25°C231mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Rds On (Max) @ Id, Vgs15Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds200pF @ 25V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-243AA (SOT-89)
Package / CaseTO-243AA

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Interface