Heisener Electronics
BOM

TP0610T-G

60V|120mA (Tj)|360mW (Ta)
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MOSFET P-CH 60V 0.12A SOT23-3

Specifications

Brand
Microchip Technology
Package
TO-236AB (SOT23)
Packaging
—
Weight
—

Total Inventory

4,030pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TP0610T-G from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C120mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB (SOT23)
Package / CaseTO-236-3, SC-59, SOT-23-3

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