Heisener Electronics
BOM

TN2510N8-G

100V|730mA (Tj)|1.6W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 100V 730MA SOT89-3

Specifications

Brand
Microchip Technology
Package
TO-243AA (SOT-89)
Packaging
—
Weight
—

Total Inventory

3,233pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TN2510N8-G from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrochip Technology
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C730mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds125pF @ 25V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-243AA (SOT-89)
Package / CaseTO-243AA

Recommended Products

637V4476C2T

637V4476C2T

XTAL OSC XO 44.7360MHZ LVDS SMD

SIT1602BC-71-18N-19-200000G

SIT1602BC-71-18N-19-200000G

MEMS OSC XO 19.2000MHZ H/LV-CMOS

SIT9005ACB2D-XXDJ

SIT9005ACB2D-XXDJ

MEMS OSC PRG SSXO LVCMOS DS 2.5V

MCN12CD100D

MCN12CD100D

CAP MICA 10PF 0.5PF 500V 1210

GA0805Y123KXBBC31G

GA0805Y123KXBBC31G

CAP CER 0.012UF 100V X7R 0805

C0603X758C1HAC7867

C0603X758C1HAC7867

CAP CER 0603 0.75PF 100V ULTRA S

M2012EA2G13

M2012EA2G13

SWITCH TOGGLE SPDT 0.4VA 28V

VE-JWZ-CY-F2

VE-JWZ-CY-F2

DC DC CONVERTER 2V 20W

3044542

3044542

CONN TERM BLK FEED THRU 12-26AWG

1408056

1408056

CUC-V14-C1ZNI-B/SJFG:10