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650V|5.8A (Ta)|60W (Tc)
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MOSFET N-CH 650V 5.8A DPAK
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- DPAK
- Packaging
- —
- Weight
- —
Total Inventory
102pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TK6P65W-RQ from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | DTMOSIV | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 2.9A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 180µA | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 300V | |
| FET Feature | - | |
| Power Dissipation (Max) | 60W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DPAK | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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