Heisener Electronics
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TK290P60Y-RQ

600V|11.5A (Tc)|100W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 11.5A DPAK

Specifications

Brand
Toshiba Semiconductor and Storage
Package
DPAK
Packaging
—
Weight
—

Total Inventory

3,044pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TK290P60Y-RQ from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs290mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds730pF @ 300V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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