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650V|13.7A (Ta)|130W (Tc)
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MOSFET N-CH 650V 13.7A TO-247
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- TO-247
- Packaging
- —
- Weight
- —
Total Inventory
429pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TK14N65W5-S1F from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | DTMOSIV | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 6.9A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 690µA | |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 300V | |
| FET Feature | - | |
| Power Dissipation (Max) | 130W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247 | |
| Package / Case | TO-247-3 |
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