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600V|9.7A (Ta)|80W (Tc)
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MOSFET N CH 600V 9.7A DPAK
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- DPAK
- Packaging
- —
- Weight
- —
Total Inventory
449pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TK10P60W-RVQ from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | DTMOSIV | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 4.9A, 10V | |
| Vgs(th) (Max) @ Id | 3.7V @ 500µA | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 300V | |
| FET Feature | Super Junction | |
| Power Dissipation (Max) | 80W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DPAK | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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