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80V|1A|30W
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THROUGH-HOLE TRANSISTOR BIPOLAR
Specifications
- Brand
- Central Semiconductor Corp
- Package
- TO-220-3
- Packaging
- —
- Weight
- —
Total Inventory
346pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TIP29B_AE from Central Semiconductor Corp fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Central Semiconductor Corp | |
| Series | - | |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 1A | |
| Voltage - Collector Emitter Breakdown (Max) | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 125mA, 1A | |
| Current - Collector Cutoff (Max) | 300µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 4V | |
| Power - Max | 30W | |
| Frequency - Transition | 3MHz | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220-3 |
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