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1.7V ~ 1.95V
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4GB SLC BENAND 24NM BGA 9X11 (EE
Specifications
- Brand
- Toshiba Memory America, Inc.
- Package
- 63-VFBGA
- Packaging
- —
- Weight
- —
Total Inventory
632pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TC58BYG2S0HBAI4 from Toshiba Memory America, Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Memory America, Inc. | |
| Series | Benand™ | |
| Memory Type | Non-Volatile | |
| Memory Format | FLASH | |
| Technology | FLASH - NAND (SLC) | |
| Memory Size | 4G (512M x 8) | |
| Memory Interface | Parallel | |
| Clock Frequency | - | |
| Write Cycle Time - Word, Page | 25ns | |
| Access Time | 25ns | |
| Voltage - Supply | 1.7V ~ 1.95V | |
| Operating Temperature | -40°C ~ 85°C (TA) | |
| Mounting Type | Surface Mount | |
| Package / Case | 63-VFBGA | |
| Supplier Device Package | 63-TFBGA (9x11) |
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