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2.7 V ~ 3.6 V
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IC EEPROM 2GBIT 25NS 67VFBGA
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- 67-VFBGA
- Packaging
- —
- Weight
- —
Total Inventory
7,808pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TC58BVG1S3HBAI6 from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | Benand? | |
| Memory Type | Non-Volatile | |
| Memory Format | EEPROM | |
| Technology | EEPROM - NAND | |
| Memory Size | 2Gb (256M x 8) | |
| Memory Interface | Parallel | |
| Clock Frequency | - | |
| Write Cycle Time - Word, Page | 25ns | |
| Access Time | 25ns | |
| Voltage - Supply | 2.7 V ~ 3.6 V | |
| Operating Temperature | -40°C ~ 85°C (TA) | |
| Mounting Type | Surface Mount | |
| Package / Case | 67-VFBGA | |
| Supplier Device Package | 67-VFBGA (6.5x8) |
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