Heisener Electronics
BOM

TBC847B-LM

50V|150mA|320mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

X34 PB-F SOT-23 TRANSISTOR FOR L

Specifications

Brand
Toshiba Semiconductor and Storage
Package
TO-236-3, SC-59, SOT-23-3
Packaging
—
Weight
—

Total Inventory

4,024pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TBC847B-LM from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic400mV @ 100mA, 5mA
Current - Collector Cutoff (Max)30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Power - Max320mW
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23

Recommended Products

SIT1602BI-71-28N-4-000000E

SIT1602BI-71-28N-4-000000E

MEMS OSC XO 4.0000MHZ H/LV-CMOS

SIT9005ACL2G-18SF

SIT9005ACL2G-18SF

MEMS OSC PRG SSXO LVCMOS DS 1.8V

1808J6300682MXR

1808J6300682MXR

CAP CER 6800PF 630V X7R 1808

XC6132N19MMR-G

XC6132N19MMR-G

VOLTAGE DETECTOR WITH DELAY, SEP

XC6136C31DNR-G

XC6136C31DNR-G

ULTRA-LOW POWER (88NA) VOLTAGE D

GCDA15C-1-GS08

GCDA15C-1-GS08

TVS DIODE 15V 30V SOT143

1608750000

1608750000

ENDPLATE 1.5MM WM BLUE ZDU 2.5

SEAF8-50-05-0-S-08-2-K

SEAF8-50-05-0-S-08-2-K

.8MM PITCH SOCKET ARRAY ASSEMBLY

PT06E8-2SX-424

PT06E8-2SX-424

PT 2C 2#20 SKT PLUG

D38999-20WD5BA_277

D38999-20WD5BA_277

CONN RCPT HSNG FMALE 5POS PNL MT