Heisener Electronics
BOM

STWA65N023M9

650 V|95A (Tc)|463W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

N-CHANNEL 650 V, 19.9 MOHM TYP.,

Specifications

Brand
STMicroelectronics
Package
TO-247 Long Leads
Packaging
—
Weight
—

Total Inventory

108pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STWA65N023M9 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs23mOhm @ 48A, 10V
Vgs(th) (Max) @ Id4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs230 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds8844 pF @ 400 V
FET Feature-
Power Dissipation (Max)463W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 Long Leads
Package / CaseTO-247-3

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