Heisener Electronics
BOM

STW65N045M9-4

650 V|54A (Tc)|312W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

N-CHANNEL 650 V, 39 MOHM TYP., 5

Specifications

Brand
STMicroelectronics
Package
TO-247-4
Packaging
—
Weight
—

Total Inventory

300pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STW65N045M9-4 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs45mOhm @ 28A, 10V
Vgs(th) (Max) @ Id4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4610 pF @ 400 V
FET Feature-
Power Dissipation (Max)312W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

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