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STW56N65M2-4

650V|49A (Tc)|358W (Tc)
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MOSFET N-CH 650V I2PAKFP

Specifications

Brand
STMicroelectronics
Package
TO-247-4L
Packaging
—
Weight
—

Total Inventory

328pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STW56N65M2-4 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs62mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3900pF @ 100V
FET Feature-
Power Dissipation (Max)358W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

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Datasheet & Documents

stw56n65m2-4.pdf

PDF Document · 12 pages

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