Heisener Electronics
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STW18NK80Z

800V|19A (Tc)|350W (Tc)
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MOSFET N-CH 800V 19A TO-247

Specifications

Brand
STMicroelectronics
Package
TO-247-3
Packaging
—
Weight
—

Total Inventory

141pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STW18NK80Z from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6100pF @ 25V
FET Feature-
Power Dissipation (Max)350W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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Datasheet & Documents

stw18nk80z.pdf

PDF Document · 14 pages

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