Heisener Electronics
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STW11NK90Z

900V|9.2A (Tc)|200W (Tc)
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MOSFET N-CH 900V 9.2A TO-247

Specifications

Brand
STMicroelectronics
Package
TO-247-3
Packaging
—
Weight
—

Total Inventory

492pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STW11NK90Z from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs980mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs115nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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Datasheet & Documents

stw11nk90z.pdf

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