Heisener Electronics
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STU8N80K5

800V|6A (Tc)|110W (Tc)
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MOSFET N CH 800V 6A IPAK

Specifications

Brand
STMicroelectronics
Package
TO-251
Packaging
—
Weight
—

Total Inventory

362pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STU8N80K5 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH5™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs16.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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Datasheet & Documents

stu8n80k5.pdf

PDF Document · 16 pages

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