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650 V|4A (Tc)|60W (Tc)
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MOSFET N-CH 650V 4A IPAK
Specifications
- Brand
- STMicroelectronics
- Package
- IPAK
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
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MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STU6N65M2-S from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | MDmesh™ M2 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V | |
| Vgs (Max) | ±25V | |
| Input Capacitance (Ciss) (Max) @ Vds | 226 pF @ 100 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 60W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | IPAK | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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