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STU5N65M6

650V|4A (Tc)|45W (Tc)
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MOSFET N-CHANNEL 650V 4A IPAK

Specifications

Brand
STMicroelectronics
Package
I-PAK
Packaging
—
Weight
—

Total Inventory

102pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STU5N65M6 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id3.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.1nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds170pF @ 100V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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