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STU2NK100Z

1000V|1.85A (Tc)|70W (Tc)
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MOSFET N-CH 1000V 1.85A IPAK

Specifications

Brand
STMicroelectronics
Package
I-PAK
Packaging
—
Weight
—

Total Inventory

154pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STU2NK100Z from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C1.85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds499pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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Datasheet & Documents

stu2nk100z.pdf

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