STU1HN60K3
600V|1.2A (Tc)|27W (Tc)
原装正品全球货源快速交付品质认证技术支持批量优惠
MOSFET N-CH 600V 1.2A IPAK
规格参数
- 品牌
- STMicroelectronics
- 封装
- I-PAK
- 包装方式
- —
库存总量
2,772个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 STMicroelectronics 的 STU1HN60K3 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
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技术规格
| Manufacturer | STMicroelectronics | |
| Series | SuperMESH3™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 600mA, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA | |
| Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 27W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | I-PAK | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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