Heisener Electronics
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STT4P3LLH6

30V|4A (Ta)|1.6W (Ta)
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MOSFET P-CH 30V 4A SOT23-6

Specifications

Brand
STMicroelectronics
Package
SOT-23-6
Packaging
—
Weight
—

Total Inventory

3,800pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STT4P3LLH6 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ H6
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs56mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds639pF @ 25V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-6
Package / CaseSOT-23-6

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Datasheet & Documents

stt4p3llh6.pdf

PDF Document · 12 pages

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