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STS1HNK60

600V|300mA (Tc)|2W (Tc)
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MOSFET N-CH 600V 300MA 8-SOIC

Specifications

Brand
STMicroelectronics
Package
8-SO
Packaging
—
Weight
—

Total Inventory

427pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STS1HNK60 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds156pF @ 25V
FET Feature-
Power Dissipation (Max)2W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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Datasheet & Documents

sts1hnk60.pdf

PDF Document · 8 pages

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