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650 V|2A
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DIODE SIL CARBIDE 650V 2A DPAK
Specifications
- Brand
- STMicroelectronics
- Package
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging
- —
- Weight
- —
Total Inventory
7,419pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STPSC2H065B-TR from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | - | |
| Diode Type | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 2A | |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 2 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V | |
| Capacitance @ Vr, F | 135pF @ 0V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | |
| Supplier Device Package | DPAK | |
| Operating Temperature - Junction | -40°C ~ 175°C |
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