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1200 V|20A
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1200 V, 20 A HIGH SURGE SILICON
Specifications
- Brand
- STMicroelectronics
- Package
- TO-247-2
- Packaging
- —
- Weight
- —
Total Inventory
516pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STPSC20G12WL from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | - | |
| Diode Type | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Current - Average Rectified (Io) | 20A | |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 20 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 150 µA @ 1200 V | |
| Capacitance @ Vr, F | 1548pF @ 0V, 1MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-2 | |
| Supplier Device Package | DO-247 LL | |
| Operating Temperature - Junction | -55°C ~ 175°C |
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