Heisener Electronics
BOM

STP9NK65Z

650V|6.4A (Tc)|125W (Tc)
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MOSFET N-CH 650V 6.4A TO-220

Specifications

Brand
STMicroelectronics
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

104pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STP9NK65Z from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C6.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 3.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1145pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Datasheet & Documents

stp9nk65z.pdf

PDF Document · 16 pages

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