Heisener Electronics
BOM

STP80N900K6

800 V|6A (Tc)|68W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

Linear IC's

Specifications

Brand
STMicroelectronics
Package
TO-220
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STP80N900K6 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds362 pF @ 400 V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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